**Change the world. Love your job.**
SiGe strained channel and silicided contact integration at 28nm demands wet etch and clean chemistries that operate at nanometer precision: removing exactly the right material, at exactly the right selectivity, without disturbing adjacent films or device structures. At LFAB, these processes don’t yet exist in production form. You will build them. As a Wet Process Development Engineer in TI’s ATD organization in Lehi, you will own the development, integration, and qualification of wet etch and clean modules for the 28nm SiGe and silicidation device flows which which directly enabling LFAB’s technology ramp from development to high-volume manufacturing. Your work spans the full arc from chemistry formulation through module integration, yield analysis, and production readiness. The wet process modules you develop will run on every wafer at LFAB.

**Responsibilities include:**

+ Module Integration: Develop and optimize wet process fl...