Design and develop cutting-edge PAs using GaAs HBT technologies to meet the rigorous requirements of 5G NR and 6G, focusing on high linearity, wide modulation bandwidth, high power, and high efficiency.
Lead the integration of PA dies into multi-chip modules (MCM) while optimizing for size, cost, and thermal performance.
Conduct 3D electromagnetic (EM) simulations using HFSS and circuit-level simulations in ADS to ensure consistency between models and measured performance.
Collaborate with filter (SAW/BAW), packaging, and systems engineers to optimize top-level module performance.
Document and present results to both internal and external customers.
Required Qualifications:
Minimum of a MSEE with at least 3 years of industry experience, or a Ph.D. degree.
Strong understanding of RF fundamentals, including S-parameters, impedance matching, stability, and linearity.