Senior Epitaxy Engineer

Department: R&D

Employment Type: Full Time

Location: Plymouth

Description

An exciting opportunity to contribute to the epitaxial growth and process development of III–V arsenide and phosphide materials (e.g., GaAs, InP, GaAsP, InGaAsP). This role will be involved in the growth recipe development, material quality, and process stability, and works closely with device and manufacturing teams to support advanced semiconductor products. This role offers the opportunity to work in a small, highly skilled team, driving the development of state‑of‑the‑art technology platforms. You will directly contribute to the technology development.

Key Responsibilities

• Growth of III–V As/P materials using MOCVD.
• Develop, optimise, and maintain growth recipes for thickness, composition, doping, and uniformity.
• Design and grow complex heterostructures (e.g., quantum wells, superlattices).