Role Overview

We are looking for an experienced IC Design Engineer with strong expertise in CMOS analog/mixed‑signal design and emerging NVM devices to help develop FMC’s next‑generation ferroelectric memory products based on hafnium oxide technology. You will work in close collaboration with international teams in Milan or Dresden to turn innovative memory concepts into robust silicon.

Must Have

CMOS IC design (Analog/Mixed Signal), NVM Device Design, Design tools: Cadence, Verilog, Programming Ability: C, Verilog, Digital Design Concepts

Responsibilities

• Design and develop emerging NVM memory devices based on hafnium oxide technology for FMC’s ferroelectric memory product portfolio.
• Define specifications and support the integration of analog and mixed‑signal blocks into the overall memory architecture.
• Design analog circui...