At Nexperia Manchester, we are expanding our Advanced Devices (TCAD) capability to accelerate innovation across our Power Trench MOSFET portfolio. As a Principal Device Engineer, you will play a critical role in shaping next‑generation device concepts, driving technology optimisation, and influencing early‑stage decisions that define our future products.

You will act as a senior technical contributor within BGMOS, applying first‑principles device physics and advanced TCAD simulation to guide development from concept through to industrialisation. This is a role for a deep technical thinker who enjoys solving complex problems, collaborating across functions, and turning simulation insights into real‑world semiconductor technologies.

What you will do

As a Principal Device Engineer, you will lead the TCAD‑driven development and optimisation of Power Trench MOSFET technologies. You will explore new device architectures, analyse performance trade‑offs, and ...