I am looking for motivated candidates to join our project on InP-based HEMT devices for THz applications at IIT Delhi.

We are hiring for two Research Associate (RA) positions:

1. Research Associate (Project lead) – Coordination between design, fabrication and dc-rf measurement team.

For candidates with experience in semiconductor/nanoelectronic device design, fabrication experience, device characterization experience, RF/microwave measurements, TCAD, or device modelling.

2. Research Associate – TCAD Design of InP HEMT Epilayer, device and modeling

For candidates interested in TCAD-based design and optimization of InP HEMT multilayer epilayer structures and device geometry, with corresponding experience.

PhD (submitted) or MTech with 3 year reaserch experience preferred in both cases.

This is an exciting opportunity to w...