Our innovative client is now searching for a MOCVD Growth Engineer to be responsible for designing the stack and growing GaN epitaxy on silicon for end market applications.

The role will involve completing R&D activities and transferring to partner sites. Working closely with customers/process/equipment engineers will be required.

Required skills for the MOCVD Growth Engineer will include;

Strong GaN-on-Si epitaxial growth knowledge

Experience of working within a high volume manufacturing area

Veeco / Aixtron experience desirable

Excellent communications skills

PhD/Masters/BSc Degree in Electrical Engineering/Physics or related discipline

Please contact Rachel Anderson for further details